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TRC : Row Cycle Time. TRC = TRAS + TRP.
TRAS = TRCD + TWR.
TRC = TRCD+TWR+TRP
CAS (tCL) Timing: CAS stands for Column Address Strobe or Column Address Select. It controls the amount of time in cycles between sending a reading command and the time to act on it. From the beginning of the CAS to the end of the CAS is the latency. The lower the time of these in cycles, the higher the memory performance.
e.g.: 4-4-4-12 The bold 4 is the CAS timing.
tRCD Timing: RAS to CAS Delay (Row Address Strobe/Select to Column Address Strobe/Select). Is the amount of time in cycles for issuing an active command and the read/write commands.
e.g.: 4-4-4-12 The bold 4 is the tRCD timing.
tRP Timing: Row Precharge Time. This is the minimum time between active commands and the read/writes of the next bank on the memory module.
e.g.: 4-4-4-12 The bold 4 is the tRP timing.
tRAS Timing: Min RAS Active Time. The amount of time between a row being activated by precharge and deactivated. A row cannot be deactivated until tRAS has completed. The lower this is, the faster the performance, but if it is set too low, it can cause data corruption by deactivating the row too soon.
tRAS = tCL + tRCD + tRP (+/- 1) so that it gives everything enough time before closing the bank.
e.g.: 4-4-4-12 The bold 12 is the tRAS timing.
tRFC Timing: (Refresh To Act Delay) Row Refresh Cycle Timing. This determines the amount of cycles to refresh a row on a memory bank. If this is set too short it can cause corruption of data and if it is too high, it will cause a loss in performance, but increased stability.
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As you want to know.
TRAS = TRCD + TWR.
TRC = TRCD+TWR+TRP
CAS (tCL) Timing: CAS stands for Column Address Strobe or Column Address Select. It controls the amount of time in cycles between sending a reading command and the time to act on it. From the beginning of the CAS to the end of the CAS is the latency. The lower the time of these in cycles, the higher the memory performance.
e.g.: 4-4-4-12 The bold 4 is the CAS timing.
tRCD Timing: RAS to CAS Delay (Row Address Strobe/Select to Column Address Strobe/Select). Is the amount of time in cycles for issuing an active command and the read/write commands.
e.g.: 4-4-4-12 The bold 4 is the tRCD timing.
tRP Timing: Row Precharge Time. This is the minimum time between active commands and the read/writes of the next bank on the memory module.
e.g.: 4-4-4-12 The bold 4 is the tRP timing.
tRAS Timing: Min RAS Active Time. The amount of time between a row being activated by precharge and deactivated. A row cannot be deactivated until tRAS has completed. The lower this is, the faster the performance, but if it is set too low, it can cause data corruption by deactivating the row too soon.
tRAS = tCL + tRCD + tRP (+/- 1) so that it gives everything enough time before closing the bank.
e.g.: 4-4-4-12 The bold 12 is the tRAS timing.
tRFC Timing: (Refresh To Act Delay) Row Refresh Cycle Timing. This determines the amount of cycles to refresh a row on a memory bank. If this is set too short it can cause corruption of data and if it is too high, it will cause a loss in performance, but increased stability.
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^
As you want to know.
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